

ON Semiconductor NDS0605
Manufacturer No:
NDS0605
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 5 ? @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
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In Stock :100
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NDS0605 information
ON Semiconductor NDS0605 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDS0605.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time
- 8 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 30mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2002
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 5Ohm
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 360mW Ta
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 360mW
- Turn On Delay Time
- 5 ns
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 5 ? @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 79pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 180mA Ta
- Gate Charge (Qg) (Max) @ Vgs
- 2.5nC @ 10V
- Rise Time
- 6.3ns
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 6.3 ns
- Turn-Off Delay Time
- 20 ns
- Continuous Drain Current (ID)
- 180mA
- Threshold Voltage
- -1.7V
- Gate to Source Voltage (Vgs)
- 20V
Download datasheets and manufacturer documentation for ON Semiconductor NDS0605.
Datasheets:
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NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.
NDS0605 Features
High saturation current
High density cell design for low RDS(ON)
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
Voltage controlled p-channel small signal switch
NDS0605 Applications
Load Switching
DC/DC converter
DC motor control
Battery protection
Power management control
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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