ON Semiconductor MMBT4403LT1G
Manufacturer No:
MMBT4403LT1G
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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In Stock :100
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MMBT4403LT1G information
ON Semiconductor MMBT4403LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT4403LT1G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time
- 10 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Surface Mount
- YES
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Voltage - Rated DC
- -40V
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- -600mA
- Frequency
- 200MHz
- Base Part Number
- MMBT4403
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 300mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 200MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic
- 750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 40V
- Transition Frequency
- 200MHz
- Collector Emitter Saturation Voltage
- -750mV
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 30
- Turn Off Time-Max (toff)
- 255ns
- Collector-Base Capacitance-Max
- 8.5pF
- Height
- 1.01mm
- Length
- 3.04mm
- Width
- 1.4mm
Download datasheets and manufacturer documentation for ON Semiconductor MMBT4403LT1G.
Environmental Information:
PCN Design/Specification:
PCN Assembly/Origin:
ReachStatement:
MMBT4403LT1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -750mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 600mA volts.
MMBT4403LT1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403LT1G Applications
There are a lot of ON Semiconductor
MMBT4403LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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