ON Semiconductor MMBT3906LT1G
Manufacturer No:
MMBT3906LT1G
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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In Stock :100
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MMBT3906LT1G information
ON Semiconductor MMBT3906LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3906LT1G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time
- 10 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Surface Mount
- YES
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Voltage - Rated DC
- -40V
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- -200mA
- Frequency
- 250MHz
- Base Part Number
- MMBT3906
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 225mW
- Gain Bandwidth Product
- 250MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- -40V
- Max Collector Current
- -200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage
- -40V
- Current - Collector (Ic) (Max)
- 200mA
- Transition Frequency
- 250MHz
- Collector Emitter Saturation Voltage
- -250mV
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- -40V
- Emitter Base Voltage (VEBO)
- -5V
- hFE Min
- 30
- Max Junction Temperature (Tj)
- 150°C
- VCEsat-Max
- 0.4 V
- Turn On Time-Max (ton)
- 70ns
- Collector-Base Capacitance-Max
- 4.5pF
- Height
- 1.11mm
Download datasheets and manufacturer documentation for ON Semiconductor MMBT3906LT1G.
Datasheets:
Environmental Information:
PCN Design/Specification:
PCN Assembly/Origin:
TechnicalDrawing:
ReachStatement:
The MMBT3906LT1G SMD PNP transistor comes with the SOT-23-3 package. This device is designed for general-purpose amplifier and switching applications with collector currents ranging from 10 A to 100 mA. It has a working temperature range of -55°C to 150°C with a power dissipation of 300mW. Because the transistor's maximum collector current is 200mA, it may drive any load that is less than 200mA (0.2A).
MMBT3906LT1G Features
PNP Transistor
AEC?Q101 Qualified
DC current gain hFE: 100~300
Maximum power dissipation: 0.3W
Surface mout for flexible PCB design
Low saturation voltage (Collector to Emitter): 0.4V
MMBT3906LT1G Applications
General Purpose Switching
General Purpose Aplification
Inverters and Converters
Darlington Pair Circuits
LED Lamp Flashers
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

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Step6:Packaging Box
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