ON Semiconductor MBRB30H30CT-1G
Manufacturer No:
MBRB30H30CT-1G
Manufacturer:
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
Schottky Rectifier Diode 1 Pair Common Cathode Fast Recovery =< 500ns, > 200mA (Io) -55°C~150°C 15A 30V-DC 2-Element TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole
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MBRB30H30CT-1G information
ON Semiconductor MBRB30H30CT-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRB30H30CT-1G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time
- 2 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Number of Pins
- 3
- Diode Element Material
- SILICON
- Packaging
- Tube
- Series
- SWITCHMODE?
- Published
- 2007
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Additional Feature
- LOW POWER LOSS
- HTS Code
- 8541.10.00.80
- Subcategory
- Rectifier Diodes
- Terminal Position
- SINGLE
- Pin Count
- 3
- Element Configuration
- Common Cathode
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type
- Schottky
- Current - Reverse Leakage @ Vr
- 800?A @ 30V
- Voltage - Forward (Vf) (Max) @ If
- 480mV @ 15A
- Forward Current
- 15A
- Max Reverse Leakage Current
- 800?A
- Operating Temperature - Junction
- -55°C~150°C
- Max Surge Current
- 30A
- Application
- EFFICIENCY
- Forward Voltage
- 550mV
- Max Reverse Voltage (DC)
- 30V
- Average Rectified Current
- 15A
- Number of Phases
- 1
- Peak Reverse Current
- 800?A
- Max Repetitive Reverse Voltage (Vrrm)
- 30V
- Peak Non-Repetitive Surge Current
- 260A
- Diode Configuration
- 1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)
- 260A
- Height
- 9.65mm
- Length
- 10.31mm
- Width
- 4.7mm
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for ON Semiconductor MBRB30H30CT-1G.
Datasheets:
MBRB30H30CT-1G Overview
In the case of 550mV forward voltage, the device will operate.Array is important to monArrayor the surge current and make sure that Array does not exceed 30A.In the case of 15A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 800?A.This semiconductor device's maximal reverse leakage current is 800?A kA, which is its reverse leakage current when reverse biased.
MBRB30H30CT-1G Features
550mV forward voltage
a peak voltage of 800?A
a reverse voltage peak of 800?A
MBRB30H30CT-1G Applications
There are a lot of ON Semiconductor
MBRB30H30CT-1G applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Rectifiers for UBS
- Battery chargers
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- General Rectification
User Guide
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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