

ON Semiconductor HGTG5N120BND
Manufacturer No:
HGTG5N120BND
Manufacturer:
Package:
TO-247-3
Description:
Quantity:
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In Stock :100
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HGTG5N120BND information
ON Semiconductor HGTG5N120BND technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor HGTG5N120BND.
- Type
- Parameter
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Weight
- 6.39g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- LOW CONDUCTION LOSS
- HTS Code
- 8541.29.00.95
- Voltage - Rated DC
- 1.2kV
- Max Power Dissipation
- 167W
- Current Rating
- 21A
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 167W
- Input Type
- Standard
- Transistor Application
- MOTOR CONTROL
- Polarity/Channel Type
- N-CHANNEL
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Max Collector Current
- 21A
- Reverse Recovery Time
- 65 ns
- Collector Emitter Breakdown Voltage
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Collector Emitter Saturation Voltage
- 2.45V
- Max Breakdown Voltage
- 600V
- Turn On Time
- 35 ns
- Test Condition
- 960V, 5A, 25 ?, 15V
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 5A
- Continuous Collector Current
- 21A
- Turn Off Time-Nom (toff)
- 357 ns
- IGBT Type
- NPT
- Gate Charge
- 53nC
- Current - Collector Pulsed (Icm)
- 40A
- Td (on/off) @ 25°C
- 22ns/160ns
- Switching Energy
- 450?J (on), 390?J (off)
- Height
- 20.82mm
- Length
- 15.87mm
- Width
- 4.82mm
Download datasheets and manufacturer documentation for ON Semiconductor HGTG5N120BND.
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HGTG5N120BND IGBT Description
The HGTG5N120BND IGBT has low conduction loss and low saturation voltage with high-reliable construction. Thanks to its NPT (Non-Punch Through) design, it is rugged and is ideal for hard switching and inverter applications. Overall, its short-circuit rating is wanted for many demanding purposes.
HGTG5N120BND IGBT Features
10A, 1200V, TC = 110°C
Low Saturation Voltage : VCE(sat) = 2.45 V @ I C = 5A
Low Conduction Loss
Typical Fall Time: 175ns at TJ = 150°C
Short Circuit Rating
HGTG5N120BND IGBT Applications
UPS system
Solar cells
General Motor Driver
Oil Pump
PTC Heater
Motor control
High voltage power supplies
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
HGTG5N120BND Relevant information
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12.28 M
Listed Part Number3,000+
Leading Manufacturers4.9 M
In-stock SKU15,000+
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