

ON Semiconductor HGTG30N60A4D
Manufacturer No:
HGTG30N60A4D
Manufacturer:
Package:
TO-247-3
Description:
Quantity:
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In Stock :100
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HGTG30N60A4D information
ON Semiconductor HGTG30N60A4D technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor HGTG30N60A4D.
- Type
- Parameter
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time
- 5 Weeks
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Weight
- 6.39g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2016
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- LOW CONDUCTION LOSS
- HTS Code
- 8541.29.00.95
- Voltage - Rated DC
- 600V
- Max Power Dissipation
- 463W
- Current Rating
- 30A
- Base Part Number
- HGTG30N60
- Element Configuration
- Single
- Power Dissipation
- 463W
- Case Connection
- COLLECTOR
- Input Type
- Standard
- Turn On Delay Time
- 25 ns
- Transistor Application
- POWER CONTROL
- Rise Time
- 12s
- Polarity/Channel Type
- N-CHANNEL
- Turn-Off Delay Time
- 150 ns
- Collector Emitter Voltage (VCEO)
- 600V
- Max Collector Current
- 75A
- Reverse Recovery Time
- 55ns
- Collector Emitter Breakdown Voltage
- 600V
- Collector Emitter Saturation Voltage
- 1.8V
- Turn On Time
- 35 ns
- Test Condition
- 390V, 30A, 3 ?, 15V
- Vce(on) (Max) @ Vge, Ic
- 2.6V @ 15V, 30A
- Turn Off Time-Nom (toff)
- 238 ns
- Gate Charge
- 225nC
- Current - Collector Pulsed (Icm)
- 240A
- Td (on/off) @ 25°C
- 25ns/150ns
- Switching Energy
- 280?J (on), 240?J (off)
- Height
- 20.82mm
Download datasheets and manufacturer documentation for ON Semiconductor HGTG30N60A4D.
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HGTG30N60A4D Description
The HGTG30N60A4D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
HGTG30N60A4D Features
? 390 V, 30 A operation at >100 kHz
? 390 V, 18 A, 200 kHz operation
? SOA Switching Capability of 600 Volts
? At TJ = 125°C, the typical fall time is 60 ns.
? Low Loss of Conduction
? SaberTM Model with Temperature Compensation
? This device is free of lead.
HGTG30N60A4D Applications
Switching applications
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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