

ON Semiconductor HGTG11N120CND
Manufacturer No:
HGTG11N120CND
Manufacturer:
Package:
TO-247-3
Description:
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In Stock :100
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HGTG11N120CND information
ON Semiconductor HGTG11N120CND technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor HGTG11N120CND.
- Type
- Parameter
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time
- 5 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Weight
- 6.39g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2016
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Additional Feature
- LOW CONDUCTION LOSS
- HTS Code
- 8541.29.00.95
- Voltage - Rated DC
- 1.2kV
- Max Power Dissipation
- 298W
- Current Rating
- 43A
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 298W
- Input Type
- Standard
- Turn On Delay Time
- 23 ns
- Transistor Application
- MOTOR CONTROL
- Turn-Off Delay Time
- 180 ns
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Max Collector Current
- 43A
- Reverse Recovery Time
- 70 ns
- Collector Emitter Breakdown Voltage
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Collector Emitter Saturation Voltage
- 2.1V
- Turn On Time
- 33 ns
- Test Condition
- 960V, 11A, 10 ?, 15V
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 11A
- Turn Off Time-Nom (toff)
- 570 ns
- IGBT Type
- NPT
- Gate Charge
- 100nC
- Current - Collector Pulsed (Icm)
- 80A
- Td (on/off) @ 25°C
- 23ns/180ns
- Switching Energy
- 950?J (on), 1.3mJ (off)
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for ON Semiconductor HGTG11N120CND.
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HGTG11N120CND Description
The HGTG11N120CND is an NPT (Non-Punch Through) IGBT. The MOS gate high voltage switching IGBT family has a new member. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTG11N120CND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49291 development type. The development type TA49189 diode was employed. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. Previously known as Developmental Type TA49303.
HGTG11N120CND Features
43 A, 1200 V, TC = 25°C
1200 V Switching SOA Capability
Typical Fall Time: 340 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
This is Pb?Free Device
HGTG11N120CND Applications
Power Management
Industrial
DC-DC Conversion
Switch application
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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