

ON Semiconductor HGT1S10N120BNST
Manufacturer No:
HGT1S10N120BNST
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
Quantity:
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In Stock :100
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HGT1S10N120BNST information
ON Semiconductor HGT1S10N120BNST technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor HGT1S10N120BNST.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Weight
- 1.31247g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2017
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Additional Feature
- LOW CONDUCTION LOSS
- HTS Code
- 8541.29.00.95
- Subcategory
- Insulated Gate BIP Transistors
- Voltage - Rated DC
- 1.2kV
- Max Power Dissipation
- 298W
- Terminal Form
- GULL WING
- Base Part Number
- HGT1S10N120
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Rise Time-Max
- 15ns
- Element Configuration
- Single
- Power Dissipation
- 298W
- Case Connection
- COLLECTOR
- Input Type
- Standard
- Transistor Application
- MOTOR CONTROL
- Polarity/Channel Type
- N-CHANNEL
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Max Collector Current
- 35A
- Collector Emitter Breakdown Voltage
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Collector Emitter Saturation Voltage
- 2.7V
- Max Breakdown Voltage
- 1.2kV
- Turn On Time
- 32 ns
- Test Condition
- 960V, 10A, 10 ?, 15V
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Continuous Collector Current
- 55A
- Turn Off Time-Nom (toff)
- 330 ns
- IGBT Type
- NPT
- Gate Charge
- 100nC
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HGT1S10N120BNST Description
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The HGT1S10N120BNST IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require low conduction losses, such as UPS, solar inverters, motor control, and power supply.
HGT1S10N120BNST Features
17A, 1200V, TC = 110°C
Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A
Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
HGT1S10N120BNST Applications
Uninterruptible Power Supply
High Voltage, the high current switching device
Induction Heating
Converters or Inverter circuits
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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