ON Semiconductor FDG6301N
ON Semiconductor FDG6301N

ON Semiconductor FDG6301N

Manufacturer No:

FDG6301N

Manufacturer:

ON Semiconductor

Package:

6-TSSOP, SC-88, SOT-363

Description:

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :100

Price not displayed? Please send an RFQ, and we will respond immediately.

FDG6301N information

ON Semiconductor FDG6301N technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDG6301N.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
  • 10 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 6-TSSOP, SC-88, SOT-363
  • Number of Pins
  • 6
  • Weight
  • 28mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 1999
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 6
  • Termination
  • SMD/SMT
  • ECCN Code
  • EAR99
  • Resistance
  • 4Ohm
  • Additional Feature
  • LOGIC LEVEL COMPATIBLE
  • Subcategory
  • FET General Purpose Power
  • Voltage - Rated DC
  • 25V
  • Max Power Dissipation
  • 300mW
  • Current Rating
  • 220mA
  • Number of Elements
  • 2
  • Element Configuration
  • Dual
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 300mW
  • Turn On Delay Time
  • 5 ns
  • FET Type
  • 2 N-Channel (Dual)
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 4 ? @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id
  • 1.5V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 9.5pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
  • 0.4nC @ 4.5V
  • Rise Time
  • 4.5ns
  • Fall Time (Typ)
  • 4.5 ns
  • Turn-Off Delay Time
  • 4 ns
  • Continuous Drain Current (ID)
  • 220mA
  • Threshold Voltage
  • 850mV
  • Gate to Source Voltage (Vgs)
  • 8V
  • Drain to Source Breakdown Voltage
  • 25V
  • Dual Supply Voltage
  • 25V
  • FET Technology
  • METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
  • 150°C
  • FET Feature
  • Logic Level Gate

Download datasheets and manufacturer documentation for ON Semiconductor FDG6301N.

Datasheets:

Environmental Information:

PCN Design/Specification:

PCN Assembly/Origin:

PCN Packaging:

FDG6301N MOSFET Description


Onsemi's patented, high cell density, DMOS technology is used to manufacture the FDG6301N dual N-Channel logic level enhancement MOSFET. This ultra-high-density technique is specifically designed to reduce on-state resistance. This device was created to replace bipolar digital transistors and tiny signal MOSFETs in low voltage applications. The FDG6301N MOSFET is widely renowned for its low drain-on-resistance and durable ESD architecture.



FDG6301N MOSFET Features


  • 25 V, 0.22 A continuous, 0.65 A peak

  • Low RDS(ON) = 4 ? @ VGS= 4.5 V

  • Very low-level gate drive requirements allow direct operation in 3 V circuits (VGS(th) < 1.5 V).

  • Gate-Source Zener for ESD ruggedness

  • Compact industry standard SC70-6 surface mount package



FDG6301N MOSFET Applications


  • High Current, High-Speed Switching

  • Up to 12s Battery Power Tools

  • Buck Converters

  • Power Converters with Multi-Megahertz Operation

  • Three-Phase Bridge for Brushless DC Motor Control

  • Lighting Applications

  • Other Half and Full-Bridge Topologies

  • Off-Line Power Supplies

  • PFC Controllers

  • Adapters

  • Battery Management

User Guide

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDG6301N Relevant information

The following parts are popular search parts in Integrated Circuits (ICs).