ON Semiconductor BZX84B12LT1G
ON Semiconductor BZX84B12LT1G

ON Semiconductor BZX84B12LT1G

Manufacturer No:

BZX84B12LT1G

Manufacturer:

ON Semiconductor

Package:

TO-236-3, SC-59, SOT-23-3

Description:

ZENER DIODE 25Ohm ±2% 12V 100nA @ 8V -65°C~150°C TJ 225mW 3 Terminations TO-236-3, SC-59, SOT-23-3

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

BZX84B12LT1G information

ON Semiconductor BZX84B12LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BZX84B12LT1G.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
  • 5 Weeks
  • Contact Plating
  • Tin
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Surface Mount
  • YES
  • Number of Pins
  • 3
  • Diode Element Material
  • SILICON
  • Number of Elements
  • 1
  • Operating Temperature
  • -65°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2007
  • Tolerance
  • ±2%
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Additional Feature
  • UL RECOGNIZED
  • HTS Code
  • 8541.10.00.50
  • Max Power Dissipation
  • 225mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Pin Count
  • 3
  • Working Voltage
  • 12V
  • Polarity
  • UNIDIRECTIONAL
  • Impedance
  • 25Ohm
  • Element Configuration
  • Single
  • Diode Type
  • ZENER DIODE
  • Current - Reverse Leakage @ Vr
  • 100nA @ 8V
  • Power Dissipation
  • 300mW
  • Voltage - Forward (Vf) (Max) @ If
  • 900mV @ 10mA
  • Max Reverse Leakage Current
  • 100nA
  • Impedance-Max
  • 25Ohm
  • Halogen Free
  • Halogen Free
  • Test Current
  • 5mA
  • Reference Voltage
  • 12V
  • Forward Voltage
  • 900mV
  • Zener Voltage
  • 12V
  • Voltage Tol-Max
  • 1.7%
  • Peak Reverse Current
  • 100nA
  • Voltage Tolerance
  • 2%
  • ESD Protection
  • Yes
  • Height
  • 1.1176mm
  • Length
  • 3.0226mm
  • Width
  • 1.397mm

Download datasheets and manufacturer documentation for ON Semiconductor BZX84B12LT1G.

BZX84B12LT1G Overview


The reverse leakage current for this electrical device should be 100nA @ 8V.1.7% indicates the maximum possible voltage (Tol) of 1.7%.A maximum reverse leakage current of 100nA is observed.For its operation, maximum voltage - Forward (Vf) 900mV @ 10mA is provided.To function properly, this device needs a reverse voltage peak of 100nA.

BZX84B12LT1G Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZX84B12LT1G Applications


There are a lot of ON Semiconductor
BZX84B12LT1G applications of zener single diodes.


User Guide

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2. For in-stock parts, orders normally could be shipped out within 1-2days.