ON Semiconductor BC857BTT1G
ON Semiconductor BC857BTT1G

ON Semiconductor BC857BTT1G

Manufacturer No:

BC857BTT1G

Manufacturer:

ON Semiconductor

Package:

SC-75, SOT-416

Description:

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :100

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BC857BTT1G information

ON Semiconductor BC857BTT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC857BTT1G.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
  • 8 Weeks
  • Contact Plating
  • Tin
  • Mounting Type
  • Surface Mount
  • Package / Case
  • SC-75, SOT-416
  • Surface Mount
  • YES
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2009
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -45V
  • Max Power Dissipation
  • 200mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Current Rating
  • -100mA
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • BC857*TT
  • Pin Count
  • 3
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 300mW
  • Power - Max
  • 200mW
  • Transistor Application
  • AMPLIFIER
  • Gain Bandwidth Product
  • 100MHz
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 45V
  • Max Collector Current
  • 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
  • 15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
  • 45V
  • Transition Frequency
  • 100MHz
  • Collector Emitter Saturation Voltage
  • -650mV
  • Max Breakdown Voltage
  • 45V
  • Collector Base Voltage (VCBO)
  • 50V
  • Emitter Base Voltage (VEBO)
  • 5V
  • hFE Min
  • 150

Download datasheets and manufacturer documentation for ON Semiconductor BC857BTT1G.

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BC857BTT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC857BTT1G Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz


BC857BTT1G Applications


There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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