ON Semiconductor BC847BPDW1T1G
Manufacturer No:
BC847BPDW1T1G
Manufacturer:
Package:
6-TSSOP, SC-88, SOT-363
Description:
Quantity:
Delivery:




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BC847BPDW1T1G information
ON Semiconductor BC847BPDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847BPDW1T1G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time
- 8 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Surface Mount
- YES
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2004
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Subcategory
- BIP General Purpose Small Signal
- Voltage - Rated DC
- 45V
- Max Power Dissipation
- 380mW
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 1A
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BC847BPD
- Pin Count
- 6
- Output Voltage
- 5V
- Number of Elements
- 2
- Polarity
- NPN, PNP
- Element Configuration
- Dual
- Power Dissipation
- 380mW
- Transistor Application
- AMPLIFIER
- Halogen Free
- Halogen Free
- Gain Bandwidth Product
- 100MHz
- Transistor Type
- NPN, PNP
- Collector Emitter Voltage (VCEO)
- 45V
- Max Collector Current
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage
- 45V
- Transition Frequency
- 100MHz
- Collector Emitter Saturation Voltage
- 600mV
- Max Breakdown Voltage
- 45V
- Collector Base Voltage (VCBO)
- 50V
- Emitter Base Voltage (VEBO)
- 5V
Download datasheets and manufacturer documentation for ON Semiconductor BC847BPDW1T1G.
Datasheets:
PCN Design/Specification:
PCN Assembly/Origin:
The BC847BPDW1T1G is a NPN/PNP Bipolar Transistor Array from ON Semiconductor. It is a low voltage, low current device with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. It is housed in a SOT363 package.
Features:
? Low voltage, low current
? Maximum collector-emitter voltage of 45V
? Maximum collector current of 0.1A
? SOT363 package
Applications:
? Switching
? Amplification
? Level shifting
? Motor control
? Power management
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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