ON Semiconductor BAS19LT1G
Manufacturer No:
BAS19LT1G
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.25V @ 200mA -55°C~150°C 100nA @ 100V 3-Termination Cut Tape (CT) TO-236-3, SC-59, SOT-23-3 Surface Mount
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BAS19LT1G information
ON Semiconductor BAS19LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS19LT1G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Surface Mount
- YES
- Number of Pins
- 3
- Diode Element Material
- SILICON
- Packaging
- Cut Tape (CT)
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- HTS Code
- 8541.10.00.70
- Capacitance
- 5pF
- Subcategory
- Rectifier Diodes
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 40
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Diode Type
- Standard
- Current - Reverse Leakage @ Vr
- 100nA @ 100V
- Power Dissipation
- 385mW
- Output Current
- 200mA
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 200mA
- Forward Current
- 200mA
- Max Reverse Leakage Current
- 100nA
- Operating Temperature - Junction
- -55°C~150°C
- Max Surge Current
- 625mA
- Halogen Free
- Halogen Free
- Breakdown Voltage
- 120V
- Current - Average Rectified (Io)
- 200mA DC
- Forward Voltage
- 1.25V
- Max Reverse Voltage (DC)
- 120V
- Average Rectified Current
- 200mA
- Reverse Recovery Time
- 50 ns
- Peak Reverse Current
- 100nA
- Max Repetitive Reverse Voltage (Vrrm)
- 120V
- Capacitance @ Vr, F
- 5pF @ 0V 1MHz
Download datasheets and manufacturer documentation for ON Semiconductor BAS19LT1G.
Datasheets:
BAS19LT1G Overview
In this device, the maximum reverse leakage current is 100nA volts.The average rectified current for this device is 200mA volts.The primary action of this electronic or electrical device produces no heat as an unwanted side effect.When the forward current reaches 200mA, it is allowed.The maximum surge current is 625mA.This device can deliver a value of 5pF depending on the capacitance.A data chart shows that the peak reverse is 100nA in the datasheets.Its breakdown voltage is 120V, which is the maximum reverse voltage that can be applied without exponentially increasing leakage current in the diode.
BAS19LT1G Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 200mA volts
the peak reverse is 100nA
the breakdown voltage of a diode is 120V
BAS19LT1G Applications
There are a lot of ON Semiconductor
BAS19LT1G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
User Guide
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