ON Semiconductor BAS116LT3G
Manufacturer No:
BAS116LT3G
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.25V @ 150mA -55°C~150°C 5nA @ 75V 3-Termination Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 Surface Mount
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BAS116LT3G information
ON Semiconductor BAS116LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS116LT3G.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Surface Mount
- YES
- Number of Pins
- 3
- Diode Element Material
- SILICON
- Packaging
- Tape & Reel (TR)
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- HTS Code
- 8541.10.00.70
- Subcategory
- Rectifier Diodes
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Element Configuration
- Single
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Diode Type
- Standard
- Current - Reverse Leakage @ Vr
- 5nA @ 75V
- Power Dissipation
- 300mW
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 150mA
- Forward Current
- 200mA
- Max Reverse Leakage Current
- 5nA
- Operating Temperature - Junction
- -55°C~150°C
- Max Surge Current
- 500mA
- Output Current-Max
- 0.2A
- Halogen Free
- Halogen Free
- Current - Average Rectified (Io)
- 200mA DC
- Forward Voltage
- 1.25V
- Max Reverse Voltage (DC)
- 75V
- Average Rectified Current
- 200mA
- Reverse Recovery Time
- 3 ?s
- Peak Reverse Current
- 5nA
- Max Repetitive Reverse Voltage (Vrrm)
- 75V
- Capacitance @ Vr, F
- 2pF @ 0V 1MHz
Download datasheets and manufacturer documentation for ON Semiconductor BAS116LT3G.
Datasheets:
BAS116LT3G Overview
A maximum reverse leakage current of 5nA volts is produced by this device.This device has an average rectified current of 200mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 300mW heat.Forward current is allowed to reach a value of zero.The least amount of 300mW heat is generated by electronic or electrical devices (loss of energy).Surge currents can be used up to 500mA.The maximum output current is 0.2A.Datasheets indicate that the peak reverse is 5nA.
BAS116LT3G Features
a maximal reverse leakage current of 5nA volts
an average rectified current of 200mA volts
the least amount of 300mW heat (energy loss)
0.2A is the maximum value
the peak reverse is 5nA
BAS116LT3G Applications
There are a lot of ON Semiconductor
BAS116LT3G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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